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For full group publications please visit our gourp archive server IPG Archive.

Recent Publications

  1. H. Shi, J. Bao, R. S. Smith, H. Huang, J. Liu, P. S. Ho, M. L. McSwiney, M. Moinpour, and G. M. Kloster, “Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics, Appl. Phys. Lett. 93, 192909, 2008
  2. X. Zhang, S. H. Im, R. Huang, P. S. Ho, Chip-Packaging Interaction and Reliability Impact on Cu/Low-k Interconnects. Submitted, January 2008.
  3. M. K. Kang, B. Li, P.S. Ho, R. Huang, Buckling of Single-Crystal Silicon Nanolines under Indentation. Journal of Nanomaterials, accepted for publication, December 2007.
  4. B. Li, M. K. Kang, K. Lu, R. Huang, P. S. Ho, R. A. Allen, and M. W. Cresswell, Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines. Nano Letters 8, 92 -98 (2008).
  5. YY. Wang , ZQ. Luo , B. Li, P.S. Ho, Z. Yao, L. Shi, EN. Bryan, RJ. Nemanich, Comparison study of catalyst nanoparticle formation and carbon nanotube growth: Support effect, Journal of Applied Physics, Vol. 101 (12) Jun 15 2007
  6. J. Liu, W. Kim, J. Bao, H. Shi, W. Baek, and P. S. Ho, Restoration and pore sealing of plasma damaged porous organosilicate low k dielectrics with phenyl containing agents,Journal of Vacuum Science & Technology B, Vol. 25 (3) 906-912 MAY-JUN 2007
  7. Chao B, Chae SH, Zhang XF, et al. Investigation of diffusion and electromigration parameters for Cu-Sn intermetallic compounds in Pb-free solders using simulated annealing, ACTA MATERIALIA Vol.55 (8), 2805-2814, MAY 2007
  8. J.-H.Zhao, P. Su, M. Ding, S. Chopin, P. S. Ho, Microstructure-Based Stress Modeling of Tin Whisker Growth, Electronics Packaging Manufacturing, IEEE Transactions on Vol. 29 (4), 265 - 273. Oct. 2006
  9. Chae SH, Zhang XF, Lu KH, et al. Electromigration statistics and damage evolution for Pb-free solder joints with Cu and NiUBM in plastic flip-chip packages, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS Vol.18 (1-3), 247-258 MAR 2007

Publications By areas

Air gap

  1. X. Zhang, S-K. Ryu, R. Huang, P.S. Ho, J. Liu and D. Toma, “Mechanical Stability Study of Air-gap Interconnects”, Submitted to Future Fab International (FFI), August 2008
  2. Xuefeng Zhang, S.K. Ryu, R. Huang, and P.S. Ho, J. Liu, and D. Toma,  “Impact of Process Induced Stressed and Chip-Packaging Interactive on Reliability of Air-Gap Interconnects”, Proceedings of the IEEE International Interconnect Technology Conference (IITC 2008), June 2-4, 2008.

Chip-Packaging

  1. X. Zhang, S. H. Im, R. Huang, P. S. Ho, Chip-Packaging Interaction and Reliability Impact on Cu/Low-k Interconnects. To appear in: Integrated Interconnect Technologies for 3D Nanoelectronic Systems (Editors: M. Bakir and J. Meindl), Artech House, Norwood, MA, 2008.

Electromigration

  1. S.-H. Chae (speaker), J. Im, T. Uehling and P. S. Ho, "Effects of UBM Thickness, Contact Trace Structure and Solder Joint Scaling on Electromigration Reliability of Pb-Free Solder Joints," in Proc. 58th IEEE Electronic Components and Technology Conference, Orlando, FL (May. 2008), pp. 354-359.
  2. S.-H. Chae (speaker), X. Zhang, J. Im and P. S. Ho, "Investigation of Intermetallic Compound Growth Enhanced by Electromigration in Pb-Free Solder Joints," in Proc. 57th IEEE Electronic Components and Technology Conference, Reno, NV (May-Jun. 2007), pp. 1442-1449.
  3. L. N. Ramanathan, T.-Y. T. Lee, J.-W. Jang, S.-H. Chae and P. S. Ho, "Current Carrying Capability of Sn0.7Cu Solder Bumps in Flip Chip Modules for High Power Applications," in Proc. 57th IEEE Electronic Components and Technology Conference, Reno, NV (May-Jun. 2007), pp. 1456-1461.
  4. S.-H. Chae, X. Zhang, K.-H. Lu, H.-L. Chao and P. S. Ho; M. Ding, P. Su, T. Uehling and L. N. Ramanathan, "Electromigration Statistics and Damage Evolution for Pb-Free Solder Joints with Cu and Ni UBM in Plastic Flip-Chip Packages," J. Mater. Sci. – Mater. Electron. 18, 247 (2007).
  5. Jung Woo Pyun, Won-Chong Baek, Lijuan Zhang, Jay Im, Paul S. Ho, Larry Smith and Gregory Smith, “Electromigraiton behavior of 60 nm dual damascene Cu interconnect”, JOURNAL OF APPLIED PHYSICS,  ACCEPTED September 2007.
  6. B. Chao, S.-H. Chae, X. Zhang, K.-H. Lu, J. Im and P. S. Ho, "Investigation of Diffusion and Electromigration Parameters for Cu-Sn Intermetallic Compounds in Pb-Free Solders Using Simulated Annealing," Acta Materialia, 55, 2805 (2007).
  7. S.-H. Chae (speaker), X. Zhang, H.-L. Chao, K.-H. Lu and P. S. Ho; M. Ding, P. Su, T. Uehling and L. N. Ramanathan, "Electromigration Lifetime Statistics for Pb-Free Solder Joints with Cu and Ni UBM in Plastic Flip-Chip Packages," in Proc. 56th IEEE Electronic Components and Technology Conference, San Diego, CA (May-Jun. 2006), pp. 650-656.
  8. B. Chao, S.-H. Chae, X. Zhang, K.-H. Lu, J. Im and P. S. Ho, "Electromigration Enhanced Intermetallic Growth and Void Formation in Pb-Free Solder Joints," J. Appl. Phys. 100, 084909 (2006).
  9. H.-L. Chao, S.-H. Chae, X. Zhang, K.-H. Lu, J. Im and P. S. Ho, "Kinetic Analysis of Current Enhanced Intermetallic Growth and Its Effect on Electromigration Reliability for Solder Joints," in Proc. IEEE 44th Annual International Reliability Physics Symposium, San Jose, CA (Mar. 2006), pp. 250-255.
  10. M. Ding, S.-H. Chae (speaker), G. Wang, H.-L. Chao and P. S. Ho, "A Study of Electromigration Failure in Pb-Free Solder Joints," in Proc. SRC TECHCON, Portland, OR (Oct. 2005).

Nanomechanics, Nanofabrication and Nano-device

  1. B. Li, Z. Luo, P.S. Ho, L. Shi, L. Rabenberg, J. Zhou, R.A. Allen, M.W. Cresswell, “Controlled Formation and Resistivity Scaling of Nickel Silicide Nanolines”,
    Submitted to Nano Letters, Journal of American Chemical Society, July 2008.
  2. B. Li, H. Huang, Q. Zhao, Z. Luo, J. Im, P. S Ho, M. K. Kang, R. Huang, M. W. Cresswell, Mechanical Characterization of High Aspect Ratio Silicon Nanolines, MRS Symposium N Proceedings, 1079-N02-10, (2008).
  3. B. Li, M. K. Kang, K. Lu, R. Huang, P. S. Ho, R. A. Allen, and M. W. Cresswell, Fabrication and Characterization of Patterned Single-Crystal Silicon Nanolines. Nano Letters 8, 92 -98 (2008).
  4. H.J. Patrick, T.A. Germer, M.W. Creswell, B. Lin, H. Huang, and P.S. Ho, Extraction of Trench Geometry and Linewidth of nanoscale grating targets in (110)-oriented silicon using angle-resolved scatterometry, Proc. SPIE 7042, 70420B (2008).
  5. Min K. Kang, Bin Li, Paul S. Ho, and Rui Huang, “Buckling of Single-Crystal Silicon Nanolines under Indentation”, Journal of Nanomaterials, Volume 2008, Article ID 132728, 11 pages, doi: 10.1155/208/132728.
  6. Michael W. Lin, Brook Chao, Jianjun Hao, Kyle Osberg, Paul S. Ho and C. Grant Willson, “Simulation and design of planarizing materials for reverse-tone step and flash imprint lithography”,  Journal of Micro/Nanolith. MEMS MOEMS 7(2), 023008, April-June 2008).
  7. Y.Y. Wang, Z. Luo, B. Li, E.N. Bryan, Z. Yao, L. Shi, R.J. Nemanich and P.S. Ho, “Support Controlled Catalytic Chemical Vapor Deposition of Carbon Nanotubes”, Proceedings of MRS 2007
  8. Yunyu Wang, Zhiquan Luo, Bin Li, Paul S. Ho, Zhen Yao, Li Shi, Eugene N. Bryan, and Robert J. Nemanich, “Comparison study of catalyst nanoparticle formation and carbon nanotube growth: Support effect”, Journal of Applied Physics, Volume 101, 124310, June 2007

Plasma damage and dielectric recovery to OSG Low-k material

  1. H. Shi, J. Bao, R. S. Smith, H. Huang, J. Liu, P. S. Ho, M. L. McSwiney, M. Moinpour, and G. M. Kloster, “Origin of dielectric loss induced by oxygen plasma on organo-silicate glass low-k dielectrics, Appl. Phys. Lett. 93, 192909, 2008
  2. H. Shi, H. Huang, J. Bao, Y. Sun, P. S. Ho, Y. Zhou, J. T. Pender, M. D. Armacost, D. Kyser, "Impact of CO2 Plasma on Porous Organosilicate (OSG) Low-k Dielectrics", Future Fab 2008.
  3. H. Shi, H. Huang, J. Bao, R. S. Smith, Y. Sun, P. S. Ho, A. Li, J. T. Pender, M. Armacost, and D. Kyser, “Mechanistic Study of CO2 Plasma Damage to OSG Low k Dielectrics”, the Advanced Metallization Conference (AMC) 2008 Proceedings, P. VI. 6.
  4. H. Huang, J. Bao, H. Shi, P. S. Ho, M. L. McSwiney, M. D. Goodner, M. Moinpour, and G. M. Kloster, O2 Plasma Damage and Dielectric Recoveries to Patterned CDO Low-κ Dielectrics, the Advanced Metallization Conference (AMC) 2008 Proceedings, P. I. 8. submitted
  5. H. Shi, H. Huang, J. Bao, Y. Sun, P. S. Ho, J. T. Pender, A. Li, Y. Zhou, M. Armacost, and D. Kyser, “Depth of plasma altered layer induced by oxidative plasma on organosilicate glass (OSG) low-k dielectrics”, to be submitted to Appl. Phys. Lett.
  6. H. Shi, J. Bao, H. Huang, B. Chao, S. Smith, Y. Sun, P. S. Ho, A. Li, M. Armacost, and D. Kyser, “Mechanistic Study of CO2 Plasma Damage to OSG Low k Dielectrics”, Proceedings of the IEEE International Interconnect Technology Conference 2008, June, 2008.
  7. H. Shi, J. Bao, H. Huang, J. Liu, S. Smith, W. Kim, Y. Sun, P. S. Ho, M. L. McSwiney, M. Moinpour, and G. M. Kloster, Dielectric Recovery of Plasma Damaged Organosilicate Low-k Films, MRS Symposium N Proceedings, 2008, 1079-N02-10.
  8. H. Shi, J. Bao, J. Liu, H. Huang, S. Smith, Q. Zhao, P. S. Ho, M. D. Goodner, M. Moinpour, and G. M. Kloster, “Dielectric Recoveries on O2 Plasma Damaged Organosilicate Low-k Dielectrics”, the Advanced Metallization Conference (AMC) 2007 Proceedings, VB.3.
  9. H. Shi, J. Bao, J. Liu, H. Huang, P. S. Ho, M. D. Goodner, M. Moinpour, and G. M. Kloster, “Effect of CH4 Plasma Treatment on O2 Plasma Ashed Organosilicate Low-k Dielectrics”, MRS Symposium B Proceedings 2007, B03-12.
  10. J. Bao, H. Shi, J. Liu, H. Huang, P.S. Ho, M.D. Goodner, M. Moinpour, and G.M. Kloster, “Mechanistic Study of Plasma Damage of Low k Dielectric Surfaces”, J. Vac. Sci. Technol. B, 26, 219, 2008.
  11. J. Bao, H. Shi, J. Liu, H. Huang, P.S. Ho, M.D. Goodner, M. Moinpour, and G.M. Kloster, “Mechanistic Study of Plasma Damage of Low k Dielectric Surfaces”, AIP Conference Proceedings, Vol. 945, 125-141, 2007.
  12. J.J. Bao, H.L. Shi, J.J. Liu, H. Huang, P.S. Ho, M.D. Goodner, M. Moinpour, and G.M. Kloster, “Mechanistic Study of Plasma Damage and CH4 Recovery of Low k Dielectric Surface”, Proceedings of the IEEE International Interconnect Technology Conference, 2007, pp. 147-149.
  13. J. Liu, W. Kim, J. Bao, H. Shi, and P. S. Ho, “Restoration and Pore Sealing of Plasma Damaged Porous Organosilicate Low k Dielectrics with Phenyl Containing Agents”, J. Vac. Sci. Technol. B, 25, 906, 2007.
  14. K. Lu, B. Chao, Z. Luo, L. Zhang, H. Shi, J. Im, and P. S. Ho, “Moisture Effects on Fracture Strength and Dielectric Constant of Underfill Materials”, Proceedings of 57th ECTC, 2007, pp. 1040-1044.
  15. J. Bao, J. Liu, M. Scharnberg, H. Shi, W. Kim, and P. S. Ho, “Initial Interface Formation during Atomic Layer Deposition of Tantalum Nitride Cu Barriers on Low Dielectric Constant Dielectrics”, Techcon conference, 2005.
  

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