JOURNAL OF MATERIALS SCIENCE 37 (2002) 689– 697

Laser chemical vapor deposition of TiC on tantalum

M. SHANE NOEL^*, D. KOVAR^*,‡

*Materials Science and Engineering Program and ‡The Department of Mechanical

Engineering, The University of Texas at Austin, Austin, TX 78712, USA

E-mail: dkovar@mail.utexas.edu

Laser chemical vapor deposition (LCVD) of titanium carbide (TiC) coatings onto tantalum substrates using hydrogen gas, titanium tetrachloride (TiCl₄) and either methane (CH₄) or acetylene (C₂H₂) source gasses was investigated. The influences of the molar ratio of the source gases and the deposition temperature on the phase assemblage, composition, and morphology of the coatings was examined. Using C₂H₂, nearly stoichiometric coatings were produced at 1000°C and at a TiCl₄/C₂H₂ ratio of 1/0.4. Stoichiometric coatings were also produced using CH₄ but the deposition temperature was 400°C higher and a much larger fraction of the carbon source was required compared to C₂H₂. Although deposition rates were much slower when using CH₄, the coatings exhibited a smoother surface finish and had a higher density compared to those produced using C₂H₂. The suitability of CH₄ and C₂H₂ as carbon sources for depositing stoichiometric, phase-pure coatings is discussed in light of these results.

^© 2002 Kluwer Academic Publishers